View 2SK3767_435842.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3767
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 2 5 25 93 2 4 150 -55~150 Unit V V V A W mJ A mJ C C
1: Gate 2: Drain 3: Source
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 5.0 62.5 Unit C/W C/W
2
Note 1:
Ensure that the channel temperature does not exceed 150.
1
Note 2: VDD = 90 V, Tch = 25Cinitial, L = 41mH, RG = 25 , IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2004-12-10
2SK3767
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min Typ. Max Unit
30
600 2.0

3.3 1.6 320 30 100 15 55 20 80 9 5 4
10
100
A
V
A
V V
4.0 4.5
0.8
S
Yfs
Ciss Crss Coss tr ton tf toff Qg Qgs Qgd

VDS = 10 V, VGS = 0 V, f = 1 MHz
pF
10 V VGS 0V ID = 1A

ns
Output RL = 200
Switching time

50

nC
Duty < 1%, tw = 10 s =
VDD 200 V -
VDD 400 V, VGS = 10 V, ID = 2A -

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition Min Typ. Max 2 5 Unit A A V ns

IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/s

1000 3.5
-1.7
C
Marking
K3767
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2004-12-10
2SK3767
ID - VDS
2 5.5 1.6 10 6 5.25 4 Common source Tc = 25C Pulse test
ID - VDS
10 6
Drain current ID (A)
(A)
3
1.2
5
ID
5.5
Drain current
2 5.25 5 1 4.75 4.5 VGS = 4V 0 0 4 8 12 16 20 24
0.8
4.75
0.4 VGS = 4V 0 0 4 8 12 16
4.5 Common source Tc = 25C Pulse test 20 24
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
5 20
VDS - VGS
Common source
(V)
Common source 4 VDS = 20 V Pulse test 3
Tc = 25 16 Pulse test
Drain current voltage VDS
Drain current ID (A)
12
2 -55 Tc=100 1 25 0 0
8
ID = 2A
4
1
0.5
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gatesource voltage VGS
(V)
Yfs - ID
10 100
RDS (ON) - ID
Common source Tc = 25C Pulse test
Forward transfer admittanceYfs (S)
Tc = -55C 1 100 25
Drain source ON resistance RDS (ON) ()
10
0.1 Common source VDS = 20 V Pulse test 0.1 1 10
VGS=10V
0.01 0.01
1 0.01
0.1
1
10
Drain current
ID
(A)
Drain current ID
(A)
3
2004-12-10
2SK3767
RDS (ON) - Tc
10 Common source 10 Common source
IDR - VDS
(A)
Drain-source ON resistance RDS (ON) ()
Drain reverse current IDR
8
VGS =10V pulse test
Tc = 25C Pulse test 1
6
ID=2A
4 0.5 2
1
0.1
10 3 1 VGS = 0, -1 V
0 -100
-50
0
50
100
150
200
0.01 0
-0.4
-0.8
-1.2
-1.6
Case temperature
(C)
Drain-source voltage
(V)
Capacitance - VDS
1000 Ciss 6
Vth - Tc
Common source
(V)
5
VDS = 10 V ID = 1 mA Pulse test
(pF)
Gate threshold voltage Vth
100
4
Capacitance C
Coss
3
10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 100 Crss
2
1
0 -80
-40
0
40
80
120
150
Drian-source voltage
VDS
(V)
Case temperature
Tc
(C)
PD - Tc
50 800
Dynamic Input / output characteristics
16
(W)
Drain-source voltage VDS (V)
Drain power dissipation PD
40
200V 600 100V 400 VDD = 400V 8 12
20
Common source 200 ID = 7.5 A Tc = 25C Pulse test 0 0 2 4 6 8 10 0 12 4
10
0 0 40 80 120 160
Case temperature
Tc
(C)
Total gate charge
Qg
(nC)
4
2004-12-10
Gate-source voltage
30
VGS (V)
2SK3767
rth - tw
Normalized transient thermal impedance rth (t)/Rth (ch-c)
10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 10 0.2 0.1 0.05 0.02 SINGLE PULSE 0.01 T Duty = t/T Rth (ch-c) = 5/W 100 1 10 100 1 10 PDM t Duty=0.5
Pulse width
tw
(s)
Safe operating area
100
200
EAS - Tch
(mJ)
10 ID max (PULSED) * 100 s * ID max (CONTINUOUS) *
160
EAS Avalanche energy
Drain current ID (A)
120
80
1
DC OPERATION Tc = 25C
1 ms *
40
0 0.1
Single nonrepetitive pulse Tc=25 Curves must be derated linearly with increase in temperature.
25
50
75
100
125
150
Channel temperature (initial)
VDSS max 100 1000
Tch
(C)
0.01 1 10
15 V
BVDSS IAR VDD VDS
Darin-source voltage VDS
(V)
-15 V
TEST CIRCUIT RG = 25 VDD = 90 V, L = 41mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 - VDD VDSS
5
2004-12-10
2SK3767
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
6
2004-12-10
This datasheet has been download from: www..com Datasheets for electronics components.

▲Up To Search▲

Price & Availability of 2SK3767

	To Download 2SK3767 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .